• Operation Voltage: 30kV, 60kV, 100kV;
• Special resolution: 0.1nm;
• EELS energy resolution: 8meV;
• Fully optimized for the low HT performance;
• Ultra stable stage: drift <0.3nm/min;
• Ultra high vacuum in sample chamber;
• Electron direct detector for EELS and 4D STEM.
• CFEG with new Delta corrector;
• 40, 80, 200, 300 keV;
• 0.53 Å spatial resolution @300 kV;
• 1.2 Å spatial resolution @40 kV;
• Optimized for EDS analysis;
• SAAF camera for DPC imaging;
• 4D STEM; In-situ capabilities;
• LN2 cooling holder.
• High resolution imaging for SEM: 1nm;
• Multiple detectors available: ETD/TLD/MD/ICD/BSD;
• Beam deceleration with stage bias;
• Ultra low voltage and Charge Neutralizer for isolator samples;
• Focused ion beam for microfabrication;
• Pt and C CVD introduced by FIB/SEM;
• EasyLift™ for precise in situ sample manipulation;
• EDS and EBSD.
• LaB6 source filament;
• Operation Voltage: 80 kV, 100 kV, 120 kV, 160 kV, 200 kV;
• TEM, BF/DF imaging, SAED, CBED, NBD, EDS;
• Cs: 1.0 nm; Cc: 1.4 nm;
• Probe size: 20-200nm for TEM;
• 1.0-25nm for CBED/NBD/EDS;
• Lattice resolution: 0.14 nm;
• Point resolution: 0.23 nm;
• Tilt ±35/30° degrees on two axes;
• In-situ capabilities.
• High spectral resolution: ~1.5 cm-1;
• SHG high spatial resolution imaging;
• Laser power continuously adjustable: 0.1 mW;
• Raman low wavenumber: 60 cm-1;
• Confocal high sensitivity: 30:1;
• Pinhole confocal system; Fast imaging: 10 ms;
• High lateral optical resolution: 350 nm;
• High-precision fully automatic mechanical platform: 25 nm;
• 532 nm excitation light;
• 1064 nm pulsed laser.
• Fig.①:Liquid N2 cooling TEM sample holder;
• Fig.②:Multi-Field Coupling TEM sample
holder;
• Fig.③:In-situ gas/heating TEM sample holder;
• Fig.④:Tomography TEM sample holder;
• Fig.⑤:In-situ nano mechanics testing TEM sample holder.
• Multi-temperature zone tube furnace (HF-kejing, OTF-1200X-III);
• High work temperature: 1200 °C;
• Temperature control accuracy: ±1 °C;
• High vacuum flange;
• Fast heating and cooling rates.